USHIO OPTO SEMICONDUCTORS, INC. announces that the company has successfully achieved power output about 1.5 times as high as before *1 with its short wavelength infrared (SWIR) LED and will release an SWIR LED equipped with a Small Size Chip on September 1.
SWIR is used to detect the presence and quantities of materials using the characteristic of materials such as water, ice, and gas of absorbing infrared rays. SWIR is also used as the light source of devices such as a pulse oximeter that measures blood oxygen saturation and a blood sugar level measurement device in the medical field.
Furthermore, SWIR is used to measure the moisture and sugar content of vegetables and fruit in the food industry. Today, SWIR is used in conjunction with an InGaAs camera to enable high-speed processing and testing of water content (freshness) in grain quality testing. Many more applications are expected for SWIR in the sensing field.
However, compared to other wavelength regions, the power output in the SWIR region is low in the current LED lighting, so the use of SWIR is limited to proximity measurement and detection, regardless of the measurement object and irradiation area. For applications that require high power output, there is no other way but to mount multiple LED chips. However, this leads to a larger package and higher cost.
To solve this issue, USHIO OPTO SEMICONDUCTORS has successfully achieved high power output by combining its SWIR laser diode technology with the technology and knowledge of EPITEX INC., which was specialized in SWIR LED manufacturing and is the predecessor of the company's LED manufacturing and development units, and also by deploying an MOCVD*2 system. This will extend the application range of SWIR to large objects, so SWIR is expected to be applied to many more agricultural products inspection, component detection, and security applications.
*1: Compared to the previous model of USHIO OPTO SEMICONDUCTORS.
*2: An abbreviation of Metal Organic Chemical Vapor Deposition, a crystal growth technique using an organic metal and gas, which is used to form a nitride single crystal multi-layer on a compound semiconductor such as an LED or semiconductor laser.
Current output characteristics at 1300 nm of the present and new chips of USHIO OPTO SEMICONDUCTORS.